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MMBTSA1298W Datasheet(PDF) 1 Page - SEMTECH ELECTRONICS LTD.

Part No. MMBTSA1298W
Description  PNP Silicon Epitaxial Planar Transistor
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Maker  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Homepage  http://www.semtech.net.cn
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Dated : 04/06/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
MMBTSA1298W
PNP Silicon Epitaxial Planar Transistor
for low frequency power amplifier and power switching
applications
The transistor is subdivided into two groups, O
and Y according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
35
V
Collector Emitter Voltage
-VCEO
30
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
800
mA
Base Current
-IB
160
mA
Total Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
Current Gain Group
at -VCE = 1 V, -IC = 800 mA
O
Y
hFE
hFE
hFE
100
160
40
-
-
-
200
320
-
-
-
-
Collector Cutoff Current
at -VCB = 30 V
-ICBO
-
-
100
nA
Emitter Cutoff Current
at -VEB = 5 V
-IEBO
-
-
100
nA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-V(BR)CEO
30
-
-
V
Emitter Base Breakdown Voltage
at -IE = 1 mA
-V(BR)EBO
5
-
-
V
Collector Saturation Voltage
at -IC = 500 mA, -IB = 20 mA
-VCE(sat)
-
-
0.4
V
Base Emitter Voltage
at -VCE = 1 V, -IC = 10 mA
-VBE
0.5
-
0.8
V
Transition Frequency
at -VCE = 5 V, -IC = 10 mA
fT
-
120
-
MHz
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Cob
-
13
-
pF




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