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Dated : 01/09/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
MA721WS
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Applications
• Super-high speed switching circuit
• Small current rectification
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Peak Forward Current
IFM
300
mA
Average Forward Current
IF(AV)
200
mA
Non-repetitive Peak Forward Surge Current
1)
IFSM
1
A
Junction Temperature
TJ
150
O
C
Storage Temperature Range
Ts
- 55 to + 150
O
C
1) The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
Characteristics at Ta = 25 OC
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at IF = 200 mA
VF
-
0.55
V
Reverse Current
at VR = 30 V
IR
-
50
µA
Terminal Capacitance
at f = 1 MHz
CT
30
-
pF
Reverse Recovery Time
at IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω
trr
3
-
ns
Anode
2
Top View
Marking Code: "DO"
Simplified outline SOD-323 and symbol
1
DO
2
PINNING
1
PIN
Cathode
DESCRIPTION