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STT3981 Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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STT3981 Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
3 / 5 page Elektronische Bauelemente STT3981 -1.6 A, -20 V, RDS(ON) 180 m Ω P-Channel Enhancement Mode Mos.FET 01-June-2005 Rev. B Page 3 of 5 CHARACTERISTIC CURVES 0 1 2 3 4 5 6 7 8 012345 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Output Characteristics Transfer Characteristics VDS Drain-to-Source Voltage (V) - - VGS Gate-to-Source Voltage (V) VGS = 5 thru 3 V 2 V TC = 55 -C 125 C 1.5 V 25 C 2.5 V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 01 23 45 6 7 0 50 100 150 200 250 300 350 400 048 12 16 20 On-Resistance vs. Drain Current VDS Drain-to-Source Voltage (V) - - ID Drain Current (A) Capacitance VGS = 4.5 V Coss Ciss VGS = 1.8 V Crss VGS = 2.5 V - - - 0.6 0.8 1.0 1.2 1.4 1.6 50 25 0 25 50 75 100 125 150 On-Resistance vs. Junction Temperatur e VGS = 4.5 V ID = 1.9 A TJ Junction Temperature ( C) Gate Charg e Qg - Total Gate Charge (nC) VDS =10V ID =1.9 A 0 01234567 1 2 3 4 5 6 |
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