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STT3585 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT3585 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 7 page N-Channel Electrical Characteristics( Tj=25 Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 20 0.02 0.5 1.2 100 1 10 75 125 4 0.7 2 6 8 10 3 370 55 40 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=20V f=1.0MHz VDS=15V ID=1A VGS=5V RG=3.3 RD=15 Ω Ω ID=3A VDS=16V VGS=4.5V VGS=4.5V, ID=3.5A VGS=2.5V, ID=1.2A VGS=0V, ID=250uA VGS= V ± VDS=20V,VGS=0 VDS=16V,VGS=0 VDS=VGS, ID=250uA Reference to 25 , ID=-1mA _ _ _ Source-Drain Diode _ _ _ _ _ _ _ Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VDS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ IS=1.2A , VGS=0V. V 1.2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%. ≦ ≦ Forward Transconductance Gfs S 7 VDS=5V, ID=3A _ _ _ 230 7 Reverse Recovery Time Reverse Recovery Charge Is=3A, VGS=0V _ _ _ _ Trr Qrr nC nS 16 8 3.Surface mounted on 1 in2 copper pad of FR4 board; 1 O C/W when mounted on Min. copper pad. _ dl/dt=100A/us oC oC oC oC oC 12 2 2 2 2 ≦ 5sec;180 Gate Resistance Rg 1.1 _ 1.7 Ω f=1.0MHz 01-Jun-2002 Rev. A Page 2 of 7 Elektronische Bauelemente STT3585 3.5A, 20V,RDS(ON)75m N And P-Channel Enhancement Mode Power Mos.FET -2.5 A, -20V,RDS(ON)160mΩ Ω |
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