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STT3434 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3434 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page Elektronische Bauelemente STT3434 6.1 A, 30 V, RDS(ON) 34 m Ω N-Channel Enhancement Mode Power Mos.FET 01-June-2005 Rev. A Page 1 of 4 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. APPLICATIONS Low on-resistance Capable of 2.5V gate drive PACKAGE DIMENSIONS ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 VGS@ 4.5V, ID @TA=25℃ VGS@ 4.5V, ID @TA=70℃ 6.1 4.9 A Pulsed Drain Current1 IDM 30 A Power Dissipation PD @TA=25℃ 1.14 W Linear Derating Factor 0.01 W/℃ Thermal Resistance Junction-ambient 3 Max. R θJA 110 ℃ /W Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 ℃ Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.10 Max L 0.45 Ref A1 0 0.10 L1 0.60 Ref A2 0.70 1.00 θ 0° 10° c 0.12 Ref b 0.30 0.50 D 2.70 3.10 e 0.95 Ref E 2.60 3.00 e1 1.90 Ref E1 1.40 1.80 |
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