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STT2605 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT2605
Description  P-Channel Enhancement Mode Power Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT2605 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
STT2605
-4.0A, -30V,RDS(ON) 80m
P-Channel Enhancement Mode Power Mos.FET
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, (Note 3)
Continuous Drain Current, (Note 3)
Pulsed Drain Current (Note 1)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Ω
Description
The STT2605 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
Features
* Fast Switching Characteristic
* Lower Gate Charge
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
* Small Footprint & Low Profile Package
The STT2605 is universally used for all commercial-industrial applications.
01-Jun-2002 Rev. A
Page 1 of 4
Parameter
Symbol
Ratings
Unit
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient (Note 3)
A
V
V
A
A
ID@TA=70
/W
C
W / C
C
W
VDS
VGS
ID@TA=25
IDM
PD@TA=25
Tj, Tstg
Rthj-a
-30
±
20
-20
-4.0
-3.3
2.0
0.016
-55~+150
62.5
D
D
G
D
D
S
2605
Date Code
1
5
2
3
4
6
S
G
D
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.10 MAX.
L
0.45 REF.
A1
0
0.10
L1
0.60 REF.
A2
0.70
1.00
10°
c
0.12 REF.
b
0.30
0.50
D
2.70
3.10
e
0.95 REF.
E
2.60
3.00
e1
1.90 REF.
E1
1.40
1.80
RoHS Compliant Product


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