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SSG4410 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4410 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 5 page  Elektronische Bauelemente SSG4410 10A, 30V,RDS(ON) 13.5m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 30 0.037 1.0 3.0 100 1 25 13.5 20 20 3 11 7.5 10.2 29 33 955 555 204 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=15V f=1.0MHz VDD=25V ID=1A VGS=5V RG=3.3 RD=25 Ω Ω ID=10A VDS=15V VGS=5V VGS=10V, ID=10A VGS=4.5V, ID=5A VGS=0V, ID=250uA VGS= 20V ± VDS=30V,VGS=0 VDS=24V,VGS=0 VDS=VGS, ID=250uA Reference to 25 ,ID=1mA _ _ _ Source-Drain Diode _ _ _ _ _ _ _ Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VDS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 16.5 _ 11.5 _ _ _ _ _ _ _ IS=1.7A, VGS=0V. V 1.3 Notes: 1.Pulse width limited by safe operating area. 2.Pulse width 300us, dutycycle 2%. ≦ ≦ Forward Transconductance Gfs S 20 VDS=15V, ID=10A _ _ _ _ _ Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) VD=VG=0V, VS=1.3V _ _ _ _ Is ISM A A 2.3 50 o C o C o C o C o 2 2 2 2 Ω 01-Jun-2002 Rev. A Page 2 of 5 |
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