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SMG1332E Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMG1332E Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 4 page  Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) uA uA uA nC nS pF Ω _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 60 _ _ _ _ 0 10 1 10 600 1.3 0.3 0.5 4 10 15 2 38 17 12 2 VGS=0V VDS=10V f=1.0MHz VDD=10V ID=600mA VGS=10V RG=3.3 RD=16.7 Ω Ω ID=600mA VDS=16V VGS=4.5V VGS=4.5V, ID=600mA VGS=±5V VDS=2 V,VGS=0 VDS=16V,VGS=0 ± Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time I nput Capacitance Output Capacitance Reverse Transfer Capacitance IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Forward Transconductance Gfs S _ _ C o C o 2 2 1 VDS=5V, ID=600mA _ _ 1200 VGS=2.5V, ID=400mA V V/ V VGS=0V, ID=250uA VDS=VGS, ID=250uA Reference to 25 , ID=1m _ _ _ _ _ C o 20 0.02 0.5 1.2 C o Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage BVDSS BVDS/ Tj VGS(th) A o 01-Jan-2006 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Source-Drain Diode Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VDS _ _ IS=300mA, VGS=0V. V 1.2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%. ≦ ≦ 2 3.Surface mounted on FR4 board, t 10sec. Elektronische Bauelemente SMG1332E 600mA, 20V,RDS(ON)600m N-Channel Enhancement Mode Power Mos.FET Ω ≦ |
Similar Part No. - SMG1332E |
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Similar Description - SMG1332E |
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