http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page

2 of 4

Elektronische Bauelemente

SMG351AN

N-Channel Enhancement Mode Power Mos.FET

Ω

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.1

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

1.0

-

2.5

V

Forward Transconductance

-

13

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

Drain-Source Leakage Current(Tj=55 : )

-

-

10

uA

-

-

60

Static Drain-Source On-Resistance

-

-

100

m

-

8.5

-

Gate-Source Charge

-

1.5

-

Gate-Drain (“Miller”) Change

-

3.2

-

nC

-

6

-

Rise Time

-

20

-

Turn-off Delay Time

-

20

-

Fall Time

-

3

-

ns

Input Capacitance

-

660

-

Output Capacitance

-

90

-

Reverse Transfer Capacitance

-

70

-

pF

f=1.0MHz

Gate Resistance

-

0.9

-

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

14

-

ns

Reverse Recovery Charge

-

7

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

: