BC807W datasheet(2/4 Pages) SEMTECH_ELEC

Part #	BC807W

Description	PNP Silicon Epitaxial Planar Transistors

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Manufacturer	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

Direct Link	http://www.semtech.net.cn

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Dated : 23/02/2006

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SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

BC807W / BC808W

Characteristics at Tamb = 25 OC

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -VCE = 1 V, -IC = 100 mA

at -VCE = 1 V, -IC = 500 mA

-16W

-25W

-40W

hFE

100

160

250

40

250

400

600

-

Collector Base Breakdown Voltage

at -IC = 10 µA

BC807W

BC808W

-V(BR)CBO

50

30

-

V

Collector Emitter Breakdown Voltage

at -IC = 10 mA

BC807W

BC808W

-V(BR)CEO

45

25

-

V

Emitter Base Breakdown Voltage

at -IE= 10 µA

-V(BR)EBO

5

-

V

Collector Emitter Saturation Voltage

at -IC = 500 mA, -IB = 50 mA

-VCEsat

-

0.7

V

Base Emitter Voltage

at -IC = 500 mA, -VCE = 1 V

-VBE

-

1.2

V

Collector Cutoff Current

at -VCB = 20 V

at -VCB = 20 V, TJ = 150 OC

-ICBO

-

100

5

nA

µA

Emitter Cutoff Current

at -VEB = 5 V

-IEBO

-

100

nA

Transition Frequency

at -VCE = 5 V, -IC = 10 mA, f = 100 MHz

fT

80

-

MHz

Collector Capacitance

at -VCB = 10 V, f = 1 MHz

Cc

-

10

pF

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