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ST2N5086 Datasheet(PDF) 2 Page - SEMTECH ELECTRONICS LTD.

Part No. ST2N5086
Description  PNP Silicon Epitaxial Planar Transistor
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Maker  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Homepage  http://www.semtech.net.cn
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 2 page
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Dated : 02/12/2005
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 2N5086 / 2N5087
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE=5V, -IC=0.1mA
at -VCE=5V, -IC= 1mA
at -VCE=5V, -IC= 10mA
ST 2N5086
ST 2N5087
ST 2N5086
ST 2N5087
ST 2N5086
ST 2N5087
hFE
hFE
hFE
hFE
hFE
hFE
150
200
150
200
150
200
-
-
-
-
-
-
500
800
-
-
-
-
-
-
-
-
-
-
Collector Base Breakdown Voltage
at -IC=100µA
-V(BR)CBO
50
-
-
V
Collector Emitter Breakdown Voltage
at -IC=1mA
-V(BR)CEO
50
-
-
V
Emitter Base Breakdown Voltage
at -IE=10µA
-V(BR)EBO
3
-
-
V
Collector Cutoff Current
at -VCB=35V
-ICBO
-
-
0.05
µA
Emitter Cutoff Current
at -VEB=3V
-IEBO
-
-
0.05
µA
Collector Saturation Voltage
at -IC=10mA, -IB=1mA
-VCE(sat)
-
-
0.3
V
Base Emitter Voltage
at -VCE=5V, -IC=1mA
-VBE(on)
-
-
0.85
V
Gain Bandwidth Product
at -VCE=5V, -IC=0.5mA
fT
40
180
-
MHz
Output Capacitance
at -VCB=10V, f=1MHz
COB
-
2.8
-
pF
Noise Figure
at -VCE=6V, -IC=0.3mA, f=100Hz, RS=10KΩ
NF
-
-
3
dB




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