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SGM161 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SGM161
Description  N-Channel Enhancement Mode Power Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SGM161 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SGM161
5.3A, 20V,RDS(ON)50m
N-Channel Enhancement Mode Power Mos.FET
Ω
Description
Features
* Notebook PC
* Li-ion Battery Systems
* On-Board Power Supplies
01-Jun-2002 Rev. A
Page 1 of
5
* Low On-Resistance
*
Capable Of 2.5
V Gate Drive
* Reliable And Rugged
* Cellular And Portable Phones
The SGM161 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@4.5V
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current
Parameter
Symbol
Ratings
Unit
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient
3
A
V
V
A
A
ID@TA=70
/W
C
W/ C
C
W
VDS
VGS
ID@TA=25
IDM
PD@TA=25
Tj, Tstg
Rthj-a
20
12
5.3
4.3
±
10
2
0.01
-55~+150
90
3
3
o
o
o
C
o
C
o
C
o
Max.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
D
G
S
Applications
SOT-89
REF.
Min.
Max.
REF.
Min.
Max.
A
4.4
4.6
G
3.00 REF.
B
4.05
4.25
H
1.50 REF.
C
1.50
1.70
I
0.40
0.52
D
1.30
1.50
J
1.40
1.60
E
2.40
2.60
K
0.35
0.41
F
0.89
1.20
L
5° TYP.
M
0.70 REF.
Millimeter
Millimeter
RoHS Compliant Product


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