Dated: 01/06/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
MMFTN138
Characteristics at Ta = 25 OC unless otherwise specified
Parameter
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
at ID = 250 µA
V(BR)DSS
50
-
V
Drain-Source Leakage Current
at VDS = 50 V
at VDS = 30 V
IDSS
-
-
500
100
nA
Gate-Source Leakage Current
at VGS = ± 20 V
IGSS
-
± 100
nA
Gate-Source Threshold Voltage
at VGS = VDS, ID = 1 mA
VGS(th)
0.8
1.6
V
Drain-Source On-State Resistance
at VGS = 10 V, ID = 220 mA
at VGS = 4.5 V, ID = 220 mA
RDS(on)
-
-
3.5
6
Ω
Forward Transconductance
at VDS = 10 V, ID = 220 mA
gFS
0.12
-
S
Input Capacitance
at VDS = 25 V, f = 1 MHz
Ciss
-
60
pF
Output Capacitance
at VDS = 25 V, f = 1 MHz
Coss
-
25
pF
Reverse Transfer Capacitance
at VDS = 25 V, f = 1 MHz
Crss
-
10
pF
Turn-On Delay Time
at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
td(on)
-
8
ns
Turn-On Rise Time
at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
tr
-
12
ns
Turn-Off Delay Time
at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
td(off)
-
16
ns
Turn-Off Fall Time
at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω
tf
-
22
ns
Drain-Source Diode Characteristics and Maximum Ratings
Parameter
Symbol
Min.
Max.
Unit
Maximum Continuous Source Current
IS
-
220
mA
Maximum Pulse Source Current
ISM
-
880
mA
Drain-Source Diode Forward Voltage
at IS = 440 mA
VGD
-
1.4
V
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