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ES12M Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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ES12M Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente ES11M~ES15M 50 ~ 600 V 1.0 Amp Surface Mount Efficient Fast Rectifiers 01-December-2008 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant DESCRIPTIONS Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Small plastic SMD package. tRR less than 25nS for high efficiency Low forward drop down voltage High surge and high current capability. Superfast recovery time for switching mode application. Glass-passivated chip junction. PACKAGING INFORMATION Case: Molded plastic Epoxy: UL94-V0 rate flame retardant Weight: 0.0270 g (approximately) MARKING CODE Part Number Marking Code Part Number Marking Code ES11M E1 ES14M E4 ES12M E2 ES15M E5 ES13M E3 ELECTRICAL CHARACTERISTICS AND RATINGS (TA = 25°C unless otherwise specified.) PART NUMBERS PARAMETERS SYMBOL ES11M ES12M ES13M ES14M ES15M UNITS TESTING CONDITIONS Recurrent Peak Reverse Voltage (Max.) VRRM 50 100 200 400 600 V RMS Voltage (Max.) VRMS 35 70 140 280 420 V Reverse Voltage (Max.) VR 50 100 200 400 600 V Forward Voltage (Max.) VF 0.875 1.25 1.75 V IF = 1A Average Forward Rectified Current (Max.) IO 1.0 A Ambient temperature = 55°C Peak Forward Surge Current IFSM 30 A 8.3ms single half sine-wave superimposed on rated load (JEDEC method) 5.0 VR=VRRM, TA=25°C DC Reverse Current at Rated DC Blocking Voltage (Max.) IR 100 μA VR=VRRM, TA=125°C Reverse Recovery Time tRR 25 nS Junction Capacitance (Typ.) CJ 15 pF f=1MHz and applied 4V DC reverse voltage Storage and Operating Temperature Range TSTG, TJ -65 ~ 175, -55 to 150 °C SOD-123M Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 3.50 3.90 D 3.60 (MAX.) B 1.40 1.80 E 0.80 (TYP.) C 1.30 1.70 F 0.30 (TYP.) E E F B C D A |
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