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2SC5706D Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # 2SC5706D
Description  NPN Silicon General Purpose Transistor
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SC5706D Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
2SC5706
D
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
http://www.SeCoSGmbH.com
Elektronische Bauelemente
FEATURES
MARKING : 5706
(With Date Code)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
MAXIMUM RATINGS* TA=25 unless otherwise noted
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCES
80
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
ICBO
5
A
Collector Current (Pulse)
ICP
7.5
A
Base Current
IB
1.2
A
Junction Temperature
Tj
+150
°C
Storage Temperature
TSTG
-55~+150
°C
PD
0.8
W
Total Power Dissipation
PD(TC=25°C)
15
W
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
Parameter
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE
fT
Cob
ton
tstg
tf
Min
80
80
50
6
-
-
-
-
-
200
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
400
15
35
300
20
Max
-
-
-
-
1
1
135
240
1.2
560
-
-
-
-
-
Unit.
V
V
V
V
µA
µA
mV
mV
V
MHz
pF
ns
ns
ns
Test Conditions
IC=10
µA, IE=0
IC=100
µA, RBE=0
IC=1mA, RBE=∞
IE=10
µA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
01-Jun-2002 Rev. A
Page 1 of 3
0. 51 0. 10
0. 51 0. 05
0 0. 10
2. 30 0. 10
6. 50 0. 15
5. 30 0. 10
0. 60 0. 10
0. 80 0. 10
2. 30 0. 10
2. 30 0. 10
1. 20
9
0. 51
0
5
5
5
B
C
E
C
TO-252
O
C
Large current capacitance
Low collector-to-emitter saturation voltage
High-speed switching
High allowable power dissipation


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