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2SC5706D Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC5706D Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page Any changing of specification will not be informed individual 2SC5706 D NPN Silicon General Purpose Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente FEATURES MARKING : 5706 (With Date Code) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) MAXIMUM RATINGS* TA=25 unless otherwise noted Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCES 80 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current ICBO 5 A Collector Current (Pulse) ICP 7.5 A Base Current IB 1.2 A Junction Temperature Tj +150 °C Storage Temperature TSTG -55~+150 °C PD 0.8 W Total Power Dissipation PD(TC=25°C) 15 W Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage 1 Collector Saturation Voltage 2 Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Turn-On Time Storage Time Fall Time Parameter Symbol BVCBO BVCES BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE fT Cob ton tstg tf Min 80 80 50 6 - - - - - 200 - - - - - Typ. - - - - - - - - - - 400 15 35 300 20 Max - - - - 1 1 135 240 1.2 560 - - - - - Unit. V V V V µA µA mV mV V MHz pF ns ns ns Test Conditions IC=10 µA, IE=0 IC=100 µA, RBE=0 IC=1mA, RBE=∞ IE=10 µA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz See specified test circuit. See specified test circuit. See specified test circuit. 01-Jun-2002 Rev. A Page 1 of 3 0. 51 0. 10 0. 51 0. 05 0 0. 10 2. 30 0. 10 6. 50 0. 15 5. 30 0. 10 0. 60 0. 10 0. 80 0. 10 2. 30 0. 10 2. 30 0. 10 1. 20 9 0. 51 0 5 5 5 B C E C TO-252 O C Large current capacitance Low collector-to-emitter saturation voltage High-speed switching • • • High allowable power dissipation • |
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