 |
 |
|
| 2SB649A |
|
||||||||||
 SECOS
|
| ||||||||||
|
2 page 
Elektronische Bauelemente 01-Jun-2002 Rev. A Page 2of 2 Maximum Collector Dissipation Curve 30 20 10 0 50 100 150 Case temperature TC (°C) Area of Safe Operation ICmax (–13.3 V, –1.5 A) (–40 V, –0.5 A) DC Operation (TC = 25°C) (–120 V, –0.038 A) (–160 V, –0.02 A) 2SB649A 2SB649 –3 –1.0 –0.3 –0.1 –0.03 –0.01 –1 –3 –10 Collector to emitter voltage VCE (V) –30 –100 –300 TC = 25°C Typical Output Characteristics –1.0 –0.8 –0.6 –0.4 –0.2 0 –10 –40 –20 IB = 0 –0.5 mA –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 –4.5 –5.0 –30 –50 Collector to emitter voltage VCE (V) Typical Transfer Characteristics –500 –100 –10 –1 0 –0.4 Base to emitter voltage VBE (V) –0.8 –0.2 –0.6 –1.0 VCE = –5 V 5 DC Current Transfer Ratio vs. Collector Current 350 VCE = –5V Ta = 75°C 25°C –25°C 350 250 200 150 100 50 0 –1 –10 –100 –1,000 Collector current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 –0 –1 –10 Collector current IC (mA) –100 –25 25 –1,000 2SB649/2SB 649A PNP Type Plastic Encapsulate Transistors http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual |
