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SI7272DP Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI7272DP Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 69026 S09-0269-Rev. B, 16-Feb-09 Vishay Siliconix Si7272DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 100 TJ = 25 °C TJ = 150 °C VSD -Source-to-Drain Voltage (V) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.005 0.010 0.015 0.020 0.025 0.030 012 345 67 8 910 TJ =25 °C TJ = 125 °C ID =15A VGS - Gate-to-Source Voltage (V) 0 8 16 24 32 40 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 10 s Limited byRDS(on)* 1ms 100 µs 10 ms 1s 100 ms DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified BVDSS Limited |
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