BAT54WS-V-GS08 datasheet(2/5 Pages) VISHAY

Part #	BAT54WS-V-GS08

Description	Small Signal Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number 85667

Rev. 1.5, 14-Nov-06

BAT54WS-V

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

2) Pulse test: t

p < 300 µs, θ < 2 %

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Reverse breakdown voltage

tested with 100 µA pulses

V(BR)

30

V

Leakage current2)

VR = 25 V

IR

2µA

Forward voltage2)

IF = 0.1 mA

VF

240

mV

IF = 1 mA

VF

320

mV

IF = 10 mA

VF

400

mV

IF = 30 mA

VF

500

mV

IF = 100 mA

VF

800

mV

Diode capacitance

VR = 1 V, f = 1 MHz

CD

10

pF

Reverse recovery time

IF = IR = 10 mA; IR = 1 mA; RL = 100 Ω

trr

5ns

Figure 1. Typical Forward Voltage Forward Current at Various

Temperatures

Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage VR

18867

1000

100

10

1

0.1

0.01

0

0.4

0.6

1.2

1.4

0.8

1

0.2

VF - Forward Current (V)

= 125 °C

Tj

25 °C

- 40 °C

18868

10

14

12

2

4

0

4

12

16

20

24

28

VR - Reverse Voltage (V)

6

8

Figure 3. Typical Variation of Reverse Current at Various

Temperatures

100

1000

10

1

0.1

0.01

510

15

20

025

30

VR - Reverse Voltage (V)

18869

= 125 °C

Tj

100 °C

75 °C

50 °C

25 C

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BAT54WS-V-GS08 Datasheet(PDF) 2 Page - Vishay Siliconix

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