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MW7IC3825GNR1 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MW7IC3825GNR1 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 23 page 2 RF Device Data Freescale Semiconductor MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDS -0.5, +65 Vdc Gate-Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Input Power Pin 45 dBm Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case WiMAX Application Stage 1, 28 Vdc, IDQ1 = 130 mA (Case Temperature 71°C, Pout = 5 W CW) Stage 2, 28 Vdc, IDQ2 = 230 mA RθJC 4.7 1.3 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1B (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Stage 1 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Stage 1 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 130 mA) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (4) (VDD = 28 Vdc, IDQ1 = 130 mA, Measured in Functional Test) VGG(Q) 3.5 4.2 5 Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. VGG = 1.55 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. (continued) |
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