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EN29P640B-90EI Datasheet(PDF) 2 Page - Eon Silicon Solution Inc. |
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EN29P640B-90EI Datasheet(HTML) 2 Page - Eon Silicon Solution Inc. |
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2 / 55 page  This Data Sheet may be revised by subsequent versions © 2004 Eon Silicon Solution, Inc., www.eonssi.com or modifications due to changes in technical specifications. 2 EN29LV640T/B Rev. G, Issue Date: 2009/03/30 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 70 ns • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 μA current in standby or automatic sleep mode. • Flexible Sector Architecture: - Eight 8-Kbyte sectors, One hundred and twenty-seven 32K-Word / 64K-byte sectors. - 8-Kbyte sectors for Top or Bottom boot. - Sector/Sector Group protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors. • High performance program/erase speed - Word program time: 8µs typical - Sector erase time: 100ms typical - Chip erase time: 16s typical • JEDEC Standard compatible • Standard DATA# polling and toggle bits feature • Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode • Support JEDEC Common Flash Interface (CFI). • Low Vcc write inhibit < 2.5V • Minimum 100K program/erase endurance cycles. • RESET# hardware reset pin - Hardware method to reset the device to read mode. • WP#/ACC input pin - Write Protect (WP#) function allows protection of outermost two boot sectors, regardless of sector protect status - Acceleration (ACC) function provides accelerated program times • Package Options - 48-pin TSOP (Type 1) - 48 ball 6mm x 8mm TFBGA - 64 ball 11mm x 13mm TFBGA • Industrial Temperature Range. GENERAL DESCRIPTION The EN29LV640T/B is a 64-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8µs. The EN29LV640T/B features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV640T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full Chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector. . EN29LV640T/B 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
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