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2SB727K Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB727K Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 4 page  SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB727K CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=> -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA, IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-3A ,IB=-6mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-6A ,IB=-60mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-3A ,IB=-6mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-6A ,IB=-60mA -3.5 V ICBO Collector cut-off current VCB=-120V, IE=0 -100 µA ICEO Collector cut-off current VCE=-100V, RBE=> -10 µA hFE DC current gain IC=-3A ; VCE=-3V 1000 20000 Switching times ton Turn-on time 1.0 µs toff Turn-off time IC=-3A, IB1=-IB2=-6mA 3.0 µs |
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