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BU508 Datasheet(PDF) 2 Page - Savantic, Inc. |
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BU508 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU508 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=2A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 TC=125°C 1.0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=5V 7 MHz ts Storage time 7 µs tf Fall time IC=4.5A ; VCC=140V IB=1.8A; LC=0.9mH LB=3µH 0.55 µs |
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