MJE2955T datasheet(1/3 Pages) SAVANTIC

Part #	MJE2955T

Description	Silicon PNP Power Transistors MJE2955T

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Manufacturer	SAVANTIC [Savantic, Inc.]

Direct Link	http://www.svntc.com

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SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

MJE2955T

DESCRIPTION

·With TO-220 package

·Complement to type MJE3055T

·DC current gain -hFE = 20–70 @ IC = -4 Adc

·Collector–emitter saturation voltage -

VCE(sat) = -1.1 Vdc (Max) @ IC =- 4 Adc

APPLICATIONS

·Designed for general–purpose

switching and amplifier applications.

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

ABSOLUTE MAXIMUM RATINGS(TC=25 )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-70

V

VCEO

Collector-emitter voltage

Open base

-60

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-10

A

IB

Base current

-6

A

PC

Collector power dissipation

TC=25

75

W

Tj

Junction temperature

150

Tstg

Storage temperature

-55~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.67

/W

Fig.1 simplified outline (TO-220) and symbol

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