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MJE2955T Datasheet(PDF) 1 Page - Savantic, Inc. |
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MJE2955T Datasheet(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJE2955T DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE = 20–70 @ IC = -4 Adc ·Collector–emitter saturation voltage - VCE(sat) = -1.1 Vdc (Max) @ IC =- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -6 A PC Collector power dissipation TC=25 75 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.67 /W Fig.1 simplified outline (TO-220) and symbol |
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