Electronic Components Datasheet Search |
|
2N6496 Datasheet(PDF) 2 Page - Savantic, Inc. |
|
2N6496 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6496 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 7 V VCEsat Collector-emitter saturation voltge IC=8A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=0.8A 2.0 V VBE Base-emitter on voltage IC=8A ; VCE=2V 1.8 V ICEO Collector cut-off current VCE=90V; IB=0 1.0 mA ICEV Collector cut-off current VCE=130V; VBE(off)=1.5V TC=150 2.0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=8A ; VCE=2V 12 100 COB Output capacitance IE=0;VCB=10V;f=1MHz 400 pF |
Similar Part No. - 2N6496 |
|
Similar Description - 2N6496 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |