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2SB536 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB536 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB536 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 µA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 µA hFE-1 DC current gain IC=-5mA ; VCE=-5V 25 hFE-2 DC current gain IC=-0.3A ; VCE=-5V 40 250 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 35 pF fT Transition frequency IC=-0.1A ; VCE=-5V 40 MHz hFE-2 Classifications N M L K 40-80 60-120 80-160 120-250 |
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