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2SD1351 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1351 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1351 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 60 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 0.25 1.0 V VBE Base-emitter on voltage IC=0.5A ; VCE=5V 0.7 1.0 V ICBO Collector cut-off current VCB=60V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=0.5A ; VCE=5V 60 300 Cob Output capacitance IE=0; VCB=10V,f=1MHz 35 pF fT Transition frequency IC=0.5A ; VCE=5V 3.0 MHz Switching times ton Turn-on time 0.65 µs tstg Storage time 1.30 µs tf Fall time IB1=-IB2=0.2A VCC=30V;RL=15A Duty cycleB1% 0.65 µs hFE Classifications O Y GR 60-120 100-200 150-300 |
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