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BD677 Datasheet(PDF) 2 Page - Savantic, Inc. |
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BD677 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Darligton Power Transistors BD675/BD677/BD679 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD675 45 BD677 60 V(BR)CEO Collector-emitter breakdown voltage BD679 IC=100mA; IB=0 80 V BD675 45 BD677 60 V(BR)CBO Collector-base breakdown voltage BD679 IC=1mA; IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=30mA 2.5 V VBE(on) Base-emitter on voltage IC=1.5A ; VCE=3V 2.5 V ICBO Collector cut-off current VCB=rated BVCBO; IE=0 Ta=100 0.2 2.0 mA ICEO Collector cut-off current VCE=1/2rated BVCEO; IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE DC current gain IC=1.5A ; VCE=3V 750 |
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