Electronic Components Datasheet Search |
|
BD646 Datasheet(PDF) 2 Page - Savantic, Inc. |
|
BD646 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors BD646/648/650/652 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD646 -60 BD648 -80 BD650 -100 V(BR)CEO Collector-emitter breakdown voltage BD652 IC=-30mA, IB=0 -120 V VCEsat-1 Collector-emitter saturation voltage IC=-3A ,IB=-12mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-5A ,IB=-50mA -2.5 V VBEsat Base-emitter saturation voltage IC=-5A ,IB=-50mA -3.0 V VBE Base-emitter on voltage IC=-3A ; VCE=-3V -2.5 V BD646 VCB=-60V, IE=0 VCB=-40V, IE=0 ;TC=150 -0.2 -2.0 BD648 VCB=-80V, IE=0 VCB=-50V, IE=0 ;TC=150 -0.2 -2.0 BD650 VCB=-100V, IE=0 VCB=-60V, IE=0 ;TC=150 -0.2 -2.0 ICBO Collector cut-off current BD652 VCB=-120V, IE=0 VCB=-70V, IE=0 ;TC=150 -0.2 -2.0 mA BD646 VCE=-30V, IB=0 BD648 VCE=-40V, IB=0 BD650 VCE=-50V, IB=0 ICEO Collector cut-off current BD652 VCE=-60V, IB=0 -0.5 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 mA hFE DC current gain IC=-3A ; VCE=-3V 750 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 2.0 /W |
Similar Part No. - BD646 |
|
Similar Description - BD646 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |