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2N6338 Datasheet(PDF) 1 Page - Savantic, Inc. |
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2N6338 Datasheet(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION ·With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6338 120 2N6339 140 2N6340 160 VCBO Collector-base voltage 2N6341 Open emitter 180 V 2N6338 100 2N6339 120 2N6340 140 VCEO Collector-emitter voltage 2N6341 Open base 150 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 25 A ICM Collector current-peak 50 A IBC Base current 10 A PD Total power dissipation TC=25 200 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 0.875 /W F Fig.1 simplified outline (TO-3) and symbol |
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