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BD250A Datasheet(PDF) 2 Page - Savantic, Inc. |
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BD250A Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors BD250/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD250 -45 BD250A -60 BD250B -80 V(BR)CEO Collector-emitter breakdown voltage BD250C IC=-30mA ;IB=0 -100 V VCEsat-1 Collector-emitter saturation voltage IC=-15A ;IB=-1.5A -1.8 V VCEsat-2 Collector-emitter saturation voltage IC=-25A ;IB=-5A -4.0 V VBE-1 Base-emitter on voltage IC=-15A ; VCE=-4V -1.6 V VBE-2 Base-emitter on voltage IC=-25A ; VCE=-4V -3.0 V BD250/250A VCE=-30V IB=0 ICEO Collector cut-off current BD250B/250C VCE=-60V IB=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-1.5A ; VCE=-4V 25 hFE-2 DC current gain IC=-15A ; VCE=-4V 10 hFE-3 DC current gain IC=-25A ; VCE=-4V 5 Switching times ton Turn-on time 0.2 µs toff Turn-off time IC=-5A; IB1=-IB2=-0.5A RL=5A 0.4 µs |
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