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BUW11A Datasheet(PDF) 2 Page - Savantic, Inc. |
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BUW11A Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page  SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BUW11 BUW11A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUW11 400 VCEO(SUS) Collector-emitter sustaining voltage BUW11A IC=0.1A ; IB=0; L=25mH 450 V BUW11 IC=3A; IB=0.6A VCEsat Collector-emitter saturation voltage BUW11A IC=2.5A; IB=0.5A 1.5 V BUW11 IC=3A; IB=0.6A VBEsat Base-emitter saturation voltage BUW11A IC=2.5A; IB=0.5A 1.4 V ICES Collector cut-off current VCE=Rated VCES; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=5mA ; VCE=5V 10 35 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time 1.0 µs ts Storage time 4.0 µs tf Fall time For BUW11F IC=3A ;IB1=-IB2=0.6A For BUW11AF IC=2.5A ;IB1=-IB2=0.5A 0.8 µs |
Similar Part No. - BUW11A |
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Similar Description - BUW11A |
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