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2SD2386 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SD2386
Description  Silicon NPN Darlington Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD2386 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
2
Silicon NPN Darlington Power Transistors
2SD2386
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
140
V
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=6mA
2.5
V
VBE
Base-emitter voltage
IC=6A ; VCE=5V
3.0
V
ICBO
Collector cut-off current
VCB=140V IE=0
5.0
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5.0
μA
hFE-1
DC current gain
IC=6A ; VCE=5V
5000
30000
hFE-2
DC current gain
IC=10A ; VCE=5V
2000
Cob
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
90
pF
fT
Transition frequency
IC=1A ; VCE=5V
30
MHz
hFE-1 Classifications
A
B
C
5000-12000
9000-18000
15000-30000


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