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2SC4123 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4123 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4123 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=5A;IB=1.2 A 5 V VBEsat Base-emitter saturation voltage IC=5A;IB=1.2 A 1.5 V VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 800 V IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA ICBO Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCE=1500V; RBE=0 1 mA hFE-1 DC current gain IC=1 A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=5V 4 6 VF Diode forward voltage IEC=7A 2.0 V Switching times tstg Storage time 3.0 μs tf Fall time IC=5A;RL=33.3Ω IB1=1A;- IB2=2A VCC=200V 0.1 0.2 μs |
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