2N6314 datasheet(2/3 Pages) ISC

Part #	2N6314

Description	Silicon PNP Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

2

Silicon PNP Power Transistors

2N6312 2N6313 2N6314

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N6312

-40

2N6313

-60

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6314

IC=-0.1A ;IB=0

-80

V

VCEsat-1

Collector-emitter saturation voltage

IC=-1.5A; IB=-0.15A

-0.7

V

VCEsat-2

Collector-emitter saturation voltage

IC=-3A; IB=-0.3A

-2.0

V

VCEsat-3

Collector-emitter saturation voltage

IC=-5A; IB=-1.25A

-4.0

V

VBE

Base-emitter on voltage

IC=-1.5A ; VCE=-2V

-1.4

V

2N6312

VCE=-30V; IB=0

2N6313

VCE=-50V; IB=0

ICEO

Collector cut-off current

2N6314

VCE=-70V; IB=0

-1.0

mA

2N6312

VCB=-40V; IE=0

2N6313

VCB=-60V; IE=0

ICBO

Collector cut-off current

2N6314

VCB=-80V; IE=0

-50

μA

ICEX

Collector cut-off current

VCE=Rated VCE; VBE(off)=1.5V

TC=125℃

-0.1

-1.0

mA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-0.5

mA

hFE-1

DC current gain

IC=-0.5A ; VCE=-2V

40

hFE-2

DC current gain

IC=-1.5A ; VCE=-2V

25

100

hFE-3

DC current gain

IC=-3A ; VCE=-2V

10

hFE-4

DC current gain

IC=-5A ; VCE=-4V

4

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

300

pF

fT

Transition frequency

IC=-0.5A;VCE=-10V;f=1.0MHz

4

MHz

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