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2N5468 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5468 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5468 2N5469 DESCRIPTION ·With TO-66 package ·High-voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5468 500 VCBO Collector-base voltage 2N5469 Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 5 A IB Base current 1 A PD Total Power Dissipation TC=25℃ 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 5.0 ℃/W Fig.1 simplified outline (TO-66) and symbol |
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