 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BQ4850YMA-85 Datasheet(PDF) 1 Page - Texas Instruments |
|
||||||||||||||||||||||||||||||
BQ4850YMA-85 Datasheet(HTML) 1 Page - Texas Instruments |
|
|
1 / 16 page  Features ® Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ® Real-Time Clock counts seconds through years in BCD format ® RAM-like clock access ® Pin-compatible with industry- standard 512K x 8 SRAMs ® Unlimited write cycles ® 10-year minimum data retention and clock operation in the absence of power ® Automatic power-fail chip dese- lect and write-protection ® Software clock calibration for greater than ±1 minute per month accuracy General Description The bq4850Y RTC Module is a non- volatile 4,194,304-bit SRAM organ- ized as 524,288 words by 8 bits with an integral accessible real-time clock. The device combines an internal lith- ium battery, quartz crystal, clock and power-fail chip, and a full CMOS SRAM in a plastic 32-pin DIP mod- ule. The RTC Module directly re- places industry-standard SRAMs and also fits into many EPROM and EE- PROM sockets without any require- ment for special write timing or limi- tations on the number of write cycles. Registers for the real-time clock, alarm and other special functions are located in registers 7FFF8h– 7FFFFh of the memory array. The clock and alarm registers are dual-port read/write SRAM loca- tions that are updated once per sec- ond by a clock control circuit from the internal clock counters. The dual-port registers allow clock up- dates to occur without interrupting normal access to the rest of the SRAM array. The bq4850Y also contains a power- fail-detect circuit. The circuit dese- lects the device whenever VCC falls below tolerance, providing a high de- gree of data security. The battery is electrically isolated when shipped from the factory to provide maxi- mum battery capacity. The battery remains disconnected until the first application of VCC. 1 bq4850Y RTC Module With 512Kx8 NVSRAM 1 PN485001.eps 32-Pin DIP Module 2 3 4 5 6 7 8 32 31 30 29 28 27 26 25 9 10 24 23 11 12 22 21 13 14 20 19 15 16 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS Pin Names A0–A18 Address input CE Chip enable WE Write enable OE Output enable DQ0–DQ7 Data in/data out VCC +5 volts VSS Ground Aug. 1996 Pin Connections |
Similar Part No. - BQ4850YMA-85 |
|
Similar Description - BQ4850YMA-85 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
