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BQ1040MA-85 Datasheet(PDF) 6 Page - Texas Instruments

Part # BQ1040MA-85
Description  8Kx8 Nonvolatile SRAM
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ1040MA-85 Datasheet(HTML) 6 Page - Texas Instruments

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Write Cycle (TA = TOPR, VCCmin ≤ VCC ≤ VCCmax)
Symbol
Parameter
-70/-70N
-85/-85N
-150/-150N
-200
Units
Conditions/Notes
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
tWC
Write cycle time
70
-
85
-
150
-
200
-
ns
tCW
Chip enable to end
of write
55
-
75
-
100
-
150
-
ns
(1)
tAW
Address valid to end
of write
55
-
75
-
90
-
150
-
ns
(1)
tAS
Address setup time
0-
0-
0-
0
-
ns
Measured from
address valid to
beginning of write. (2)
tWP
Write pulse width
55
-
65
-
90
-
130
-
ns
Measured from
beginning of write to
end of write. (1)
tWR1
Write recovery time
(write cycle 1)
5-
5-
5-
5
-
ns
Measured from WE
going high to end of
write cycle. (3)
tWR2
Write recovery time
(write cycle 2)
15
-
15
-
15
-
15
-
ns
Measured from CE
going high to end of
write cycle. (3)
tDW
Data valid to end of
write
30
-
35
-
50
-
70
-
ns
Measured from first
low-to-high transition
of either CE or WE.
tDH1
Data hold time
(write cycle 1)
0-
0-
0-
0
-
ns
Measured from WE
going high to end of
write cycle. (4)
tDH2
Data hold time
(write cycle 2)
10
-
10
-
0
-
0
-
ns
Measured from CE
going high to end of
write cycle. (4)
tWZ
Write enabled to
output in high Z
025
0
30
050
0
70
ns
I/O pins are in output
state. (5)
tOW
Output active from
end of write
5-
5-
5-
5
-
ns
I/O pins are in output
state. (5)
Notes:
1.
A write ends at the earlier transition of CE going high and WE going high.
2.
A write occurs during the overlap of a low CE and a low WE. A write begins at the later transition
of CE going low and WE going low.
3.
Either tWR1 or tWR2 must be met.
4.
Either tDH1 or tDH2 must be met.
5.
If CE goes low simultaneously with WE going low or after WE going low, the outputs remain in
high-impedance state.
Sept. 1996 D
bq4010/bq4010Y
6-6


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