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LTC4213IDDB Datasheet(PDF) 3 Page - Linear Technology |
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LTC4213IDDB Datasheet(HTML) 3 Page - Linear Technology |
3 / 20 page LTC4213 3 4213f ∆VGSMAX – ∆VGSARM Difference Between ∆VGSMAX and VSENSEN = 0, VCC ≥ 2.97V ● 0.3 1.1 V ∆VGSARM VSENSEN = 0, VCC = 2.3V ● 0.15 0.8 V VREADY(OL) READY Pin Output Low Voltage IREADY = 1.6mA, Pull Down Device On ● 0.2 0.4 V IREADY(LEAK) READY Pin Leakage Current VREADY = 5V, Pull Down Device Off ● 0 ±1 µA VON(TH) ON Pin High Threshold ON Rising, GATE Pulls Up ● 0.76 0.8 0.84 V ∆VON(HYST) ON Pin Hysteresis ON Falling, GATE Pulls Down 10 40 90 mV VON(RST) ON Pin Reset Threshold ON Falling, Fault Reset, GATE Pull Down ● 0.36 0.4 0.44 V ION(IN) ON Pin Input Current VON = 1.2V ● 0 ±1 µA ∆VOV Overvoltage Threshold ● 0.41 0.7 1.1 V ∆VOV = VSENSEP – VCC tOV Overvoltage Protection Trip Time VSENSEP = VSENSEN = Step 5V to 6.2V 25 65 160 µs tFAULT(SLOW) VCB Trips to GATE Discharging ∆VSENSE Step 0mV to 50mV, ● 716 27 µs VSENSEN Falling, VCC = VSENSEP = 5V tFAULT(FAST) VCB(FAST) Trips to GATE Discharging ∆VSENSE Step 0V to 0.3V, VSENSEN Falling, ● 1 2.5 µs VSENSEP = 5V tDEBOUNCE Startup De-Bounce Time VON = 0V to 2V Step to Gate Rising, 27 60 130 µs (Exiting Reset Mode) tREADY READY Delay Time VGATE = 0V to 8V Step to READY Rising, 22 50 115 µs VSENSEP = VSENSEN = 0 tOFF Turn-Off Time VON = 2V to 0.6V Step to GATE Discharging 1.5 5 10 µs tON Turn-On Time VON = 0.6V to 2V Step to GATE Rising, 4 8 16 µs (Normal Mode) tRESET Reset Time VON Step 2V to 0V 20 80 150 µs Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 5V, ISEL = 0 unless otherwise noted. (Note 2) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Note 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to ground unless otherwise specified. |
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