STT6603 datasheet(1/7 Pages) SAMHOP

Part #	STT6603

Description	P-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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STT6603

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

-60V

-2.5A

240 @ VGS=-4.5V

Ver 1.0

www.samhop.com.tw

Nov,17,2008

1

Details are subject to change without notice.

G

D

S

P-Channel Enhancement Mode Field Effect Transistor

S mHop Microelectronics C orp.

a

180 @ VGS=-10V

SO - 223

T

G

S

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

SOT-223 package.

Symbol

VDS

VGS

IDM

60

W

A

PD

°C

2.08

-55 to 150

ID

Units

Parameter

-60

-2.5

°C/W

V

±20

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

-Pulsed

b

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

a

TA=25°C

-20

A

TA=70°C

A

W

-2.0

1.33

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STT6603 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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