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STS6601 Datasheet(PDF) 3 Page - SamHop Microelectronics Corp. |
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STS6601 Datasheet(HTML) 3 Page - SamHop Microelectronics Corp. |
3 / 7 page STS6601 Ver 1.0 www.samhop.com.tw Sep,30,2008 3 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 T j ( ° C ) 75 25 50 125 150 V G S =-4.5V ID= -2.6A 240 200 160 120 80 40 1 1 VGS =-10V 2 4 6 8 10 VG S = -4.5V 15 12 9 6 3 0 0 0.9 5.2 4.5 3.6 2.7 1.8 125 C -55 C 25 C 10 8 6 4 2 0 0 V G S = -10V 0.5 1.0 1.5 2.0 2.5 3.0 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 V DS =V GS ID=-250uA 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 ID=-250uA 0.85 125 150 100 75 50 25 0 -25 -50 -VDS, Drain-to-Source Voltage(V) Figure 1. Output Characteristics -VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics -ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Tj, Junction Temperature(° C ) Figure 6. Breakdown Voltage Variation with Temperature V G S = -4.5V V G S = -3.5V V G S = -4V V G S = -3V G S =-10V =-3.2A V ID |
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