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STS3623 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STS3623 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page 30 Dual N-Channel Enhancement Mode Field Effect Transistor J un, 09 2006 AB S OL UTE MAXIMUM R ATING S (TA=25 C unles s otherwis e noted) P arameter S ymbol Limit Unit Drain-S ource Voltage VDS V G ate-S ource Voltage VGS V Drain C urrent-C ontinuous @ TJ=25 C -P ulsed ID 4 A A A W IDM 16 Drain-S ource Diode Forward C urrent IS 1.25 Maximum P ower Dissipation P D Operating J unction and S torage Temperature R ange TJ, TS TG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, J unction-to-Ambient R thJA 100 /W C S T S 3623 1.25 a a b 1 S amHop Microelectronics C orp. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m ) Max 30V 4A 50 @ V G S = 10V 65 @ V G S = 4.5V F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT-26 package. 20 G 2 S 1 G 1 D1 D2 S 2 S OT26 Top View S 2 D2 S 1 G 1 D1 G 2 1 2 3 6 5 4 |
Similar Part No. - STS3623 |
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Similar Description - STS3623 |
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