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Dual N-C hannel E nhancement Mode Field E ffect Transistor ABS OLUTE MAXIMUM R ATING S (TA=25 C unless otherwise noted) THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, J unction-to-Ambient R JA 62.5 /W C a S amHop Microelectronics C orp. 1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m Ω ) Max 30V 8.5A 19 @ V G S = 10V 28 @ V G S = 4.5V S T M6610 Dec. 11 2006 1 2 3 4 8 7 6 5 S 1 G 1 S 2 G 2 D1 D1 D2 D2 P arameter S ymbol Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S V Drain C urrent-C ontinuous @ T a -P uls ed ID A A A W IDM Drain-S ource Diode F orward C urrent IS Maximum P ower Dis s ipation P D Operating J unction and S torage Temperature R ange T J , T S TG -55 to 150 C a a a b 25 C 70 C T a= 25 C T a=70 C A N-Channel 1.7 20 8.5 40 2 30 6.5 1.44 S urface Mount P ackage. F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. E S D P rotected. S O-8 1 |
