Part Name
         Description
ST426S

 N-Channel Logic Level E nhancement Mode F ield E ffect Transistor ( 9 Page)


SAMHOP
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Parameter
Symbol
C ondition
Min Typ Max Unit
ELEC TR IC AL C HAR AC TE R ISTIC S (TC=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE C HAR ACTE R IS TICS
Diode Forward Voltage
VSD
VGS = 0V, Is = 20A
1.3
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 2. Trans fer C haracteris tics
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
ID, Drain C urrent (A)
V GS , G ate-to-S ource Voltage (V )
3
12
9
6
3
1
20
15
10
5
0
0
Tj =125 C
0.95
Tj( C )
T j, J unction T empera ture ( C )
F igure 1. Output C haracteris tics
V DS ,Drain-to-S ource Voltage (V )
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
V GS =3V
V GS =4V
VGS=4.5 V
VGS=10V
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
12
24
36
48
60
1
V GS =10V
V GS =4.5V
V GS =2.5V
2.0
1.8
1.6
1.4
1.2
1.0
0
0
25
50
125
100
75
V GS =10V
ID=10A
V GS =4.5V
ID=5A
150
60
15
S T U/D426S
3.2
4.0
2.4
1.6
0.8
4.8
-55 C
25 C
c. S
in
t
r
a
t
g TJ=25
L =0.5 mH, RG=25
Ω , IAS 20
=
A,
(
)
Se
e Figure15
VDD<
-V( )
BR DSS
C,
d.
Pulse Test:Pulse Width 1us, Duty Cycle 1 %.
<
-
<
-



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