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SHXXC760 Datasheet(PDF) 1 Page - Hind Rectifiers Limited. |
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SHXXC760 Datasheet(HTML) 1 Page - Hind Rectifiers Limited. |
1 / 5 page Capsule Type Rectifier Diode SHXXC760 Symbol Characteristics Conditions T J( 0 C) Value Unit BLOCKING PARAMETERS V RRM Repetitive peak reverse voltage 180 200-600 V I RRM Repetitive peak reverse current V = V RRM 180 25 mA CONDUCTING PARAMETERS I F(AV) Average on-state current 180 sine, 50H Z, T C = 104 0 C 760 A I RMS RMS on-state current 1200 A I FSM Non repetitive peak surge on- state current 8500 A I2t Permissible surge energy Sine wave, 10mS without reverse voltage 180 361 kA2S V FM Peak on-state voltage drop On-state current = 2000A 180 1.39 V V 0 Typical forward conduction Threshold voltage 180 0.70 V r 0 Typical forward slope resistance 180 0.30 mΩ THERMAL & MECHANICAL PARAMETERS R TH (J-C) Thermal impedance, 1800 conduction, Sine Junction to case 0.079 0 C/W R TH (C-HK) Thermal impedance Case to heatsink 0.015 0 C/W T J Maximum Permissible junction temperature 180 0 C T STG Storage temperature range -40 – 180 0 C F Mounting Torque 6.5 KN W Weight 70 gms H H II N N D D R R E E C C T T II F F II E E R R S S L L T T D D 1 of 5 |
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