TSTS7303 datasheet(1/5 Pages) VISHAY

Part #	TSTS7303

Description	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

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TSTS730.

Vishay Telefunken

1 (5)

Rev. 2, 20-May-99

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 81048

GaAs IR Emitting Diodes in Hermetically Sealed TO18

Case

Description

The TSTS730. series are infrared emitting diodes in

standard GaAs technology in a hermetically sealed

TO–18 package. Their glass lenses provide a high ra-

diant intensity without external optics.

Features

D High radiant intensity

D Suitable for pulse operation

D Angle of half intensity ϕ = ± 12°

D Peak wavelength lp = 950 nm

D High reliability

D Good spectral matching to Si photodetectors

94 8642

Applications

Radiation source in near infrared range

Absolute Maximum Ratings

Tamb = 25_C

Parameter

Test Conditions

Symbol

Value

Unit

Reverse Voltage

VR

5

V

Forward Current

Tcase x 25 °C

IF

250

mA

Peak Forward Current

tp/T = 0.5, tp x 100 ms,

Tcase x 25 °C

IFM

500

mA

Surge Forward Current

tp x 100 ms

IFSM

2.5

A

Power Dissipation

PV

170

mW

Tcase x 25 °C

PV

500

mW

Junction Temperature

Tj

100

°C

Storage Temperature Range

Tstg

–55...+100

°C

Thermal Resistance Junction/Ambient

RthJA

450

K/W

Thermal Resistance Junction/Case

RthJC

150

K/W

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