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H16TB Datasheet(PDF) 1 Page - Hind Rectifiers Limited. |
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H16TB Datasheet(HTML) 1 Page - Hind Rectifiers Limited. |
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1 / 6 page  PHASE CONTROL THYRISTOR H16TB/TLXX Symbol Characteristics Conditions T J ( 0 C) Value Unit BLOCKING PARAMETERS V RRM Repetitive peak reverse voltage 125 200-1600 V V DRM Repetitive peak off-stage voltage 125 200-1600 V I RRM Repetitive peak reverse current V = V RRM 125 15 mA I DRM Repetitive peak off-state current V = V RRM 125 15 mA d V/dT Rep. rate of change of Voltage @ 67%V DRM 125 600 V/μS CONDUCTING PARAMETERS I F(AV) Average on-state current 180 sine, 50H Z, TC = 850C 16 A I RMS RMS on-state current 25 A I TSM Surge on-state current 350 A I2t I2t Sine wave, 10mS without reverse voltage 125 610 A2S V T On-state voltage On-state current = 53A 125 2.05 V V 0 Threshold voltage 125 1.10 V r 0 On-state slope resistance 125 16 mΩ di/dt Repetitive rate of rise of current d IG/dT = 1A/µS V GK = 1V 125 100 A/μS TRIGGERING PARAMETERS I GT Gate trigger current V D = 5V 25 100 mA V GT Gate trigger voltage 25 2.50 V I L Latching Current V D = 5V 25 300 mA IH Holding Current V D = 5V 25 200 mA PG –PEAK Maximum Peak Gate Power Pulse width 100μS 30 W V FGM Maximum forward gate voltage 12 V I FGM Maximum forward gate current 10 A THERMAL & MECHANICAL PARAMETERS R TH (J-C) Thermal impedance, 180 conduction, Sine Junction to case 1.40 0 C/W R TH (C-HK) Thermal impedance Case to heatsink 0.30 0 C/W T J Maximum Permissible junction temperature 125 0 C T STG Storage temperature range -40 - 125 0 C F Mounting Torque 2 NM W Weight For TB For TL 30 15 gms H HIIN ND D R RE EC CT TIIF FIIE ER RS S L LT TD D 1 of 6 |
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