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LTC3410BESC6-1.5 Datasheet(PDF) 8 Page - Linear Technology |
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LTC3410BESC6-1.5 Datasheet(HTML) 8 Page - Linear Technology |
8 / 16 page 8 LTC3410B 3410bfa The basic LTC3410B application circuit is shown in Fig- ure 1. External component selection is driven by the load requirement and begins with the selection of L followed by CIN and COUT. Inductor Selection For most applications, the value of the inductor will fall in the range of 2.2 µH to 4.7µH. Its value is chosen based on the desired ripple current. Large value inductors lower ripple current and small value inductors result in higher ripple currents. Higher VIN or VOUT also increases the ripple current as shown in Equation 1. A reasonable starting point for setting ripple current is ∆IL = 120mA (40% of 300mA). ∆ = ()( ) − ⎛ ⎝⎜ ⎞ ⎠⎟ I fL V V V L OUT OUT IN 1 1 (1) The DC current rating of the inductor should be at least equal to the maximum load current plus half the ripple current to prevent core saturation. Thus, a 360mA rated inductor should be enough for most applications (300mA + 60mA). For better efficiency, choose a low DC-resistance inductor. APPLICATIO S I FOR ATIO Inductor Core Selection Different core materials and shapes will change the size/ current and price/current relationship of an inductor. Tor- oid or shielded pot cores in ferrite or permalloy materials are small and don’t radiate much energy, but generally cost more than powdered iron core inductors with similar electrical characteristics. The choice of which style induc- tor to use often depends more on the price vs size require- ments and any radiated field/EMI requirements than on what the LTC3410B requires to operate. Table 1 shows some typical surface mount inductors that work well in LTC3410B applications. Table 1. Representative Surface Mount Inductors MAX DC MANUFACTURER PART NUMBER VALUE CURRENT DCR HEIGHT Taiyo Yuden CB2016T2R2M 2.2 µH 510mA 0.13Ω 1.6mm CB2012T2R2M 2.2 µH 530mA 0.33Ω 1.25mm LBC2016T3R3M 3.3 µH 410mA 0.27Ω 1.6mm Panasonic ELT5KT4R7M 4.7 µH 950mA 0.2Ω 1.2mm Sumida CDRH2D18/LD 4.7 µH 630mA 0.086Ω 2mm Murata LQH32CN4R7M23 4.7 µH 450mA 0.2Ω 2mm Taiyo Yuden NR30102R2M 2.2 µH 1100mA 0.1Ω 1mm NR30104R7M 4.7 µH 750mA 0.19Ω 1mm FDK FDKMIPF2520D 4.7 µH 1100mA 0.11Ω 1mm FDKMIPF2520D 3.3 µH 1200mA 0.1Ω 1mm FDKMIPF2520D 2.2 µH 1300mA 0.08Ω 1mm CIN and COUT Selection In continuous mode, the source current of the top MOS- FET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maxi- mum RMS capacitor current is given by: CI VV V IN OMAX OUT IN OUT required IRMS ≅ − () ⎡⎣ ⎤⎦ 1/2 2 VIN Figure 1. High Efficiency Step-Down Converter VIN CIN 2.2 µF CER VIN 2.7V TO 5.5V LTC3410B RUN 4.7 µH 10pF 232k 464k 3410 F01 SW VFB GND COUT 2.2 µF CER VOUT 1.2V |
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