AOZ9004BI datasheet(4/17 Pages) AOSMD

Part #	AOZ9004BI

Description	Single-Cell Battery Protection IC with Integrated MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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4 / 17 page

AOZ9004B

Rev. 1.2 August 2008

www.aosmd.com

Page 4 of 17

Block Diagram

Figure 2. AOZ9004B Function Block Diagram

Absolute Maximum Ratings

Exceeding the Absolute Maximum ratings may damage the device.

Note:

6. The value of RθJA is measured with the device mounted on 1-in2 FR-4 board with 2-oz. copper, in a still air

environment with TA = 25°C. The value in any given application depends on the user’s specific board design.

Parameter

Rating

VDD to VSS

-0.3V to +12V

VM to VDD

-28V to +0.3V

MOSFET Gate-to-Source Voltage

-0.3V to +12V

Continuous Drain Current(4)

(RθJA = 95°C/W, TA = 25°C)

(RθJA = 95°C/W, TA = 85°C)

5A

3A

Pulsed Drain Current

30A

Storage Temperature (TS)

-55°C to +125°C

Operating Temperature (TA)

-40°C to +85°C

Power Dissipation(6)

(RθJA = 95°C/W, TA = 25°C)

(RθJA = 95°C/W, TA = 85°C)

1.1W

0.5W

Charger

Detection

Discharge

Over-Current

Comp

Over-Charge

Comp

Over-

Discharge

Comp

Oscillator

Counter/

Logic

0V Battery

Charge

Function

R2

2k

Ω

VM

VDD

VSS

C1

0.1

μF

R1

220

Ω

RVDM

RVMS

EB-

EB+

Charge

Over-Current

Comp

Short-Circuit

Comp

Battery Protection IC

AOZ9004B

Dual Common-Drain MOSFET

OUTM

N1

N2

Single-Cell

Lithium-Ion/

Lithium Polymer

Battery

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