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AOT10N60 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOT10N60 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  Symbol AOTF10N60 VDS VGS 10* 6.4* IDM IAR EAR EAS dv/dt 50 0.4 TJ, TSTG TL Symbol AOTF10N60 RθJA 65 RθCS - RθJC 2.5 * Drain current limited by maximum junction temperature. 1.7 A mJ mJ 208 Single pulsed avalanche energy G 580 Pulsed Drain Current C 290 Avalanche Current C 4.4 Repetitive avalanche energy C Continuous Drain Current B Units Parameter TC=25°C TC=100°C V V A ID Gate-Source Voltage Drain-Source Voltage 600 Absolute Maximum Ratings TA=25°C unless otherwise noted AOT10N60 Derate above 25 oC Power Dissipation B TC=25°C °C/W Thermal Characteristics Units °C/W PD °C -50 to 150 °C/W Peak diode recovery dv/dt 5 V/ns Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 °C W W/ oC Junction and Storage Temperature Range 10 6.4 ±30 36 Parameter AOT10N60 Maximum Junction-to-Ambient A 65 Maximum Case-to-Sink A 0.5 Maximum Junction-to-Case D,F 0.6 AOT10N60 / AOTF10N60 600V, 10A N-Channel MOSFET formerly engineering part number AOT9608/AOTF9608 Features VDS (V) = 700V @ 150°C ID = 10A RDS(ON) < 0.75 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! General Description The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Top View G D S TO-220F TO-220 G D S G D S Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Similar Part No. - AOT10N60 |
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Similar Description - AOT10N60 |
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