 |
 |
|
| AON6450L |
|
|||||||||||||||
 AOSMD
|
| |||||||||||||||
|
2 page 
AON6450L Symbol Min Typ Max Units BVDSS 100 V VDS=100V, VGS=0V 10 TJ=55°C 50 IGSS 100 nA VGS(th) Gate Threshold Voltage 2.8 3.4 4 V ID(ON) 110 A 12.1 14.5 TJ=125°C 22.8 27.5 14 17.5 m Ω gFS 52 S VSD 0.7 1 V IS 52 A Ciss 2000 2570 3100 pF Coss 170 250 330 pF Crss 50 80 120 pF Rg 0.4 0.8 1.2 Ω Qg(10V) 34 43 52 nC Qg(4.5V) 9 11.5 14 nC Qgs 11 14 17 nC Qgd 8 13.5 19 nC tD(on) 15 ns tr 5ns tD(off) 28.5 ns tf 5ns trr 17 24 31 ns Qrr 75 108 140 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=20A, dI/dt=500A/µs VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA VDS=VGS ID=250µA VDS=0V, VGS= ±25V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance m Ω IS=1A,VGS=0V VDS=5V, ID=20A VGS=7V, ID=20A VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=50V, ID=20A Gate Source Charge Gate Drain Charge Total Gate Charge Rev 0: January 2009 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev 0: January 2009 www.aosmd.com Page 2 of 7 |
